Memory sub-system management based on dynamic control of wordline start voltage
US11915785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2021 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Dec 19, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A request to perform a write operation at a memory device is received. Current wordline start voltage (WLSV) information associated with a particular memory segment of the plurality of memory segments is retrieved. The write operation is performed on the particular memory segment. In a firmware record in a memory sub-system controller, information is stored indicative of a last written memory page associated with the particular memory segment on which the write operation is performed. The firmware record is managed in view of the information indicative of the last written memory page associated with the performed write operation. Each entry of the firmware record comprises one or more identifying indicia associated with a respective memory segment, at least one of the identifying indicia being a wordline start voltage (WLSV) associated with the respective memory segment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.