Self-assembled monolayers as sacrificial capping layers
US11915973B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Dec 8, 2020 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Jul 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6715
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method includes providing a substrate containing a metal surface and a dielectric material surface, selectively forming a sacrificial capping layer containing a self-assembled monolayer on the metal surface, removing the sacrificial capping layer to restore the metal surface, and processing the restored metal surface and the dielectric material surface. The sacrificial capping layer may be used to prevent metal diffusion into the dielectric material and to prevent oxidation and contamination of the metal surface while waiting for further processing of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.