Patent · US Active

Electronic device

US11916059B2 · kind B2 · utility

0Cited by

3References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Andre Schmenn · Sachsenkam, DE
Stefan Pompl · Landshut, DE
Damian Sojka · Regensburg, DE
Katharina Umminger · Wenzenbach, DE

Key dates

Filing date	Aug 25, 2021
Grant date	Feb 27, 2024
Priority date	—
Expiry date	May 17, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/60
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An ESD protection device may include: a first vertically integrated ESD protection structure comprising a first semiconductor portion, a first contact region disposed on a first side of the first semiconductor portion and a first terminal exposed on a second side of the first semiconductor portion opposite the first side of the first semiconductor portion, a second vertically integrated ESD protection structure comprising a second semiconductor portion, a second contact region disposed on a first side of the second semiconductor portion and a second terminal exposed on a second side of the second semiconductor portion opposite the first side of the second semiconductor portion, an electrical connection layer, wherein the first vertically integrated ESD protection structure and the second vertically integrated ESD protection structure are disposed on the electrical connection layer laterally separated from each other and are electrically connected with each other anti-serially via the electrical connection layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.