High reliability polysilicon components
US11916067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2022 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Mar 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure introduces, among other things, an electronic device, e.g. an integrated circuit (IC). The IC includes a semiconductor substrate comprising a first doped layer of a first conductivity type. A second doped layer of the first conductivity type is located within the first doped layer. The second doped layer has first and second layer portions with a greater dopant concentration than the first doped layer, with the first layer portion being spaced apart from the second layer portion laterally with respect to a surface of the substrate. The IC further includes a lightly doped portion of the first doped layer, the lightly doped portion being located between the first and second layer portions. A dielectric isolation structure is located between the first and second layer portions, and directly contacts the lightly doped portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.