Regrowth uniformity in GaN vertical devices
US11916134B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2020 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Dec 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having a first conductivity type, a drift layer of the first conductivity type coupled to the semiconductor substrate, a fin array having a first row of fins and a second row of fins on the drift layer, and a space between the first row of fins and the second row of fins. The first row of fins includes a plurality of first elongated fins arranged in parallel to each other along a first row direction and separated by a first distance, and the second row of fins includes a plurality of second elongated fins arranged in parallel to each other along a second row direction and separated by a second distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.