Ray Milano
10Patents
1h-index
6Co-inventors
36Inventor score
Filing activity: Jul 15, 2020 → Mar 12, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11315884B2 | Method and system for fabricating fiducials using selective area growth | Electricity | 2 | Active |
| US11929440B2 | Fabrication method for JFET with implant isolation | Electricity | 1 | Active |
| US11335810B2 | Method and system for fabrication of a vertical fin-based field effect transistor | Electricity | 1 | Active |
| US12272654B2 | Method and system for fabricating fiducials using selective area growth | Electricity | 0 | Active |
| US12125914B2 | Method and system for fabrication of a vertical fin-based field effect transistor | Electricity | 0 | Active |
| US12274086B2 | Fabrication method for JFET with implant isolation | Electricity | 0 | Active |
| US11935838B2 | Method and system for fabricating fiducials using selective area growth | Electricity | 0 | Active |
| US11637209B2 | JFET with implant isolation | Electricity | 0 | Active |
| US11735671B2 | Method and system for fabrication of a vertical fin-based field effect transistor | Electricity | 0 | Active |
| US11916134B2 | Regrowth uniformity in GaN vertical devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.