Lateral bipolar junction transistors including a graded silicon-germanium intrinsic base
US11916136B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2022 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Aug 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer on a semiconductor substrate, a second terminal having a second raised semiconductor layer on the semiconductor substrate, and an intrinsic base on the semiconductor substrate. The intrinsic base is positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The intrinsic base includes a portion containing silicon-germanium with a germanium concentration that is graded in the lateral direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.