Device and method for measuring thermal load caused by energy transfer upconversion in laser gain crystal
US11916349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2020 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Dec 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/109
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A device and a method for measuring a thermal load caused by energy transfer upconversion in a laser gain crystal. Increasing the pump power multiple times so that the power meter obtains multiple thresholds for a single-frequency laser; obtaining an average pump threshold of the output laser; obtaining cavity parameters of the single-frequency laser; obtaining thermal focal lengths on the tangential and sagittal planes of the laser gain crystal inside the single-frequency laser; obtaining individual ABCD matrices of the laser system on the tangential and the sagittal planes; obtaining a thermal load at the threshold based on the ABCD transfer matrix of the laser gain crystal on the tangential plane, the ABCD transfer matrix of the laser gain crystal on the sagittal plane, and the average pump threshold of the laser system; obtaining a thermal load caused by ETU at threshold based on the thermal load at the threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.