Semiconductor memory device
US11917805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2021 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Apr 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
Abstract
A semiconductor memory device includes: a first word line extending in a vertical direction; a second word line spaced apart from the first word line in a first horizontal direction and extending in the vertical direction; a first semiconductor pattern of a ring-shaped horizontal cross-section surrounding the first word line and constituting a portion of a first cell transistor; a second semiconductor pattern of a ring-shaped horizontal cross-section surrounding the second word line and constituting a portion of a second cell transistor; a cell capacitor between the first semiconductor pattern and the second semiconductor pattern and including a first electrode, a second electrode, and a capacitor dielectric film; a first bit line opposite the cell capacitor with respect to the first semiconductor pattern and extending in a second horizontal direction; and a second bit line opposite the cell capacitor with respect to the second semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.