Semiconductor devices
US11917812B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2021 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | May 6, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate structure and a contact plug. The gate structure extends in a first direction parallel to the substrate, and includes a first conductive pattern, a second conductive pattern and a gate mask sequentially stacked. The contact plug contacts an end portion in the first direction of the gate structure, and includes a first extension portion extending in a vertical direction and contacting sidewalls of the gate mask and the second conductive pattern, a second extension portion under and contacting the first extension portion and a sidewall of the first conductive pattern, and a protrusion portion under and contacting the second extension portion. A bottom of the protrusion portion does not contact the first conductive pattern. A first slope of a sidewall of the first extension portion is greater than a second slope of a sidewall of the second extension portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.