Patent · US Active

Selective non-volatile memory device and associated reading method

US11923006B2 · kind B2 · utility

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10Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Gabriele Navarro · Moirans, FR
Anthonin Verdy · Grenoble, FR

Key dates

Filing date	Nov 2, 2020
Grant date	Mar 5, 2024
Priority date	—
Expiry date	Mar 10, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/026
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A selective non-volatile memory device includes a first electrode, a second electrode and at least one layer made of an active material. The device has at least two programmable memory states associated with two voltage thresholds and also provides a selective role when it is in a highly resistive state.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.