Plasma processing system and method of supporting plasma ignition
US11923174B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 28, 2020 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Nov 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing system includes a plasma processing apparatus including a processing container that accommodates a substrate, and configured to perform a plasma processing on the substrate by generating a plasma in the processing container; and a control device configured to control the plasma processing apparatus. The control device collects a measurement value indicating a matching state of impedance between a power supply and the plasma; specifies a point corresponding to a value of the variables that maximizes a gradient of change of the measurement value with respect to a vector; specifies a point farther from the matching point than the passing point on a straight line; and ignites the plasma in the plasma processing apparatus by controlling each variable so that the measurement value changes from the starting point toward the matching point along the straight line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.