Semiconductor image sensor having reflection component and method of making
US11923393B2 · kind B2 · utility
0Cited by
6References
19Claims
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Key dates
| Filing date | Jan 7, 2021 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Jul 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A semiconductor image sensor includes a pixel. The pixel includes a first substrate; and a photodiode in the first substrate. The semiconductor image sensor further includes an interconnect structure electrically connected to the pixel. The semiconductor image sensor further includes a reflection structure between the interconnect and the photodiode, wherein the reflection structure is configured to reflect light passing through the photodiode back toward the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.