Lateral Schottky diode
US11923462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2021 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Dec 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various aspects of Schottky diodes are described. The diodes are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter in some cases among other aspects. In one example, a Schottky diode includes a conduction layer, a first layer over the conduction layer, a second layer over the first layer, a first cathode and a second cathode spaced apart and in electrical contact with the conduction layer, and an anode over the second layer between the first cathode and the second cathode. The first cathode and the second cathode can be electrically connected to each other as a cathode of the Schottky diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.