Power semi-conductor module, mask, measurement method, computer software, and recording medium
US11927619B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2019 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Dec 24, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Power semi-conductor module (1) comprising: —at least one IGBT with a Gate G forming a first electrode (11) and an Emitter E forming a second electrode (12), or —at least one MOSFET with a Gate G forming a first electrode (11) and a Source S forming a second electrode (12). The first electrode (11) includes a polysilicon material made in one piece. The one-piece is made partly of a monitoring portion (13). The monitoring portion (13) is in electrical contact with the second electrode (12) such that a leakage current flows between the first electrode (11) and the second electrode (12) in an operational state of the module (1). The monitoring portion (13) has a location, a form, a size and a material composition selected together such that to have a variable resistance in function of its temperature during the operational state of the module (1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.