Plasma processing apparatus and semiconductor device manufacturing method using the same
US11929239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2021 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Sep 3, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes: an electrostatic chuck supporting a wafer, and connected to a first power supply, an edge ring disposed to surround an edge of the electrostatic chuck and formed of a material having a first resistivity value, a dielectric ring supporting a lower portion of the edge ring, formed of a material having a second resistivity value lower than that of the first resistivity value, and connected to a second power supply, and an electrode ring disposed in a region overlapping the dielectric ring, in contact with a lower surface of the edge ring, and formed of a material having a third resistivity value greater than the first resistivity value, wherein the third resistivity value is a value of 90 Ωcm to 1000 Ωcm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.