Method of high-density pattern forming
US11929255B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 25, 2021 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Feb 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of high-density pattern forming, which includes: providing a substrate; forming a hard mask layer on the substrate; forming a sacrificial layer on the hard mask layer; forming photoresists arranged at intervals on the sacrificial layer; etching the sacrificial layer to enable the sacrificial layer to form a mandrel corresponding to the photoresist one by one, wherein a cross-sectional size of the mandrel gradually decreases from an end of the mandrel away from the hard mask layer to an end close to the hard mask layer; forming an isolation layer on the mandrel; removing the isolation layer on the top of the mandrel, the isolation layer covering the hard mask layer, and the mandrel to form an isolation sidewall pattern; and transferring the isolation sidewall pattern to the hard mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.