Semiconductor apparatus with heat dissipation conduit in sidewall interconnection structure, method of manufacturing the same, and electronic device
US11929304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2022 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | May 30, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor apparatus with a heat dissipation conduit in a sidewall interconnection structure, a method of manufacturing the semiconductor apparatus, and an electronic device including the semiconductor apparatus. According to the embodiments, the semiconductor apparatus includes: a carrier substrate having a first region and a second region adjacent to each other; a semiconductor device on the first region; and an interconnection structure on the second region, wherein the interconnection structure includes: an electrical isolation layer; a conductive structure in the electrical isolation layer, wherein at least a part of components require to be electrically connected in the semiconductor device is in contact with and therefore electrically connected to the conductive structure in a lateral direction, wherein the conductive structure is located at a corresponding height in the interconnection structure; and a heat dissipation conduit in the electrical isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.