Conductive contact for ion through-substrate via
US11929379B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2022 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Jun 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/08145
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present disclosure are directed towards a method for forming an integrated chip, the method includes forming a through substrate via (TSV) in a first substrate. The TSV continuously extends from a first surface of the first substrate to a second surface of the first substrate. A conductive contact is formed on the second surface of the first substrate. The conductive contact comprises a first conductive layer disposed on the TSV. An upper conductive layer is formed between the conductive contact and the TSV. The upper conductive layer comprises a silicide of a conductive material of the first conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.