Semiconductor device and method for manufacturing the same
US11929406B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2021 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Mar 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate electrode, first and second passivation layers, first and second field plates. The gate electrode is disposed above nitride-based semiconductor layers. The first passivation layer covers the gate electrode. The first field plate is disposed on the first passivation layer. The first passivation layer has a first portion covered with the first field plate and a second portion free from coverage of the first field plate. The second passivation layer covers the first field plate. The second field plate is disposed over the second passivation layer. The second passivation has a first portion covered with the second field plate and a second portion is free from coverage of the second field plate. A thickness difference between the first and second portions of the first passivation layer is less than a thickness difference between the first and second portions of the second passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.