High ruggedness heterojunction bipolar transistor (HBT)
US11929427B2 · kind B2 · utility
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2References
13Claims
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Key dates
| Filing date | Jan 14, 2021 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Dec 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6644
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Provided is a high ruggedness heterojunction bipolar transistor (HBT), including a collector layer. The collector layer includes a InGaP layer or a wide bandgap layer. The bandgap of the InGaP layer is greater than 1.86 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.