Nitride-based semiconductor device and method for manufacturing the same
US11929429B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2021 |
| Grant date | Mar 12, 2024 |
| Priority date | — |
| Expiry date | Aug 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode and a single field plate. The source electrode, the drain electrode, and the gate electrode are disposed on the second nitride-based semiconductor layer. The gate electrode is between the source and drain electrodes. The single field plate is disposed over the gate electrode and extends toward the drain electrode. The field plate has a first end part, a second end part and the central part. The first and the second end parts are located at substantially the same height. Portions of the central part are in a position lower than that of the first and second end parts, and the first end part extends laterally in a length greater than a width of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.