Systems and methods for production of silicon using a horizontal magnetic field
US11932962B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Apr 5, 2022 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Apr 5, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B30/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.