Patent · US Active

Method of producing a semiconductor laser and semiconductor laser

US11935755B2 · kind B2 · utility

0Cited by

1References

18Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

Alfred Lell · Maxhütte-Haidhof, DE
Georg Brüderl · Burglengenfeld, DE
John Brückner · Santa Monica, US
Sven Gerhard · Alteglofsheim, DE
Muhammad Ali · Dublin, IE
Thomas Adlhoch · Brennberg, DE

Key dates

Filing date	Dec 18, 2020
Grant date	Mar 19, 2024
Priority date	—
Expiry date	Jul 15, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/032
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.