Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
US11935762B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2022 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Aug 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a technique that includes: a first processing module including a first process container in which at least one substrate is processed, a first utility system including a first supply system which supplies a first processing gas into the first process container and a surface of the first utility system is connected or arranged close to the first processing module; and a first vacuum pump arranged at the same level as a first exhaust port of the first process container. The first vacuum pump exhausts an inside of the first process container and includes a first intake port formed laterally at a position substantially facing the first exhaust port of the first process container. A first exhaust pipe configured to substantially linearly bring the first exhaust port into fluid communication with the first intake port and including a first valve installed in a flow path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.