Electrostatically clamped edge ring
US11935776B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2021 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Jul 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68785
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.