Chip warpage reduction via raised free bending and re-entrant (auxetic) trace geometries
US11935810B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | May 6, 2021 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Oct 9, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24942
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device and method of making the same including a substrate and at least one expansion layer that adds stress to the substrate when said substrate expands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.