Semiconductor device and method of fabricating the same
US11935832B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2022 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Oct 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposing each other, and a side surface between the first and second surfaces, and including a device region on the first surface a wiring structure on the surface of the semiconductor substrate, and having a dielectric layer and a metal wiring in the dielectric layer and electrically connected to the device region, and an insulating material layer on a side surface of the wiring structure and having a side surface connected to the side surface of the semiconductor substrate. The side surface of the insulating material layer has a first wave-shaped pattern in which concave-convex portions are repeated in a direction of the wiring structure that is perpendicular to the semiconductor substrate, and the side surface of the semiconductor substrate has a second wave-shaped pattern in which concave-convex portions are repeated in the direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.