Source or drain structures with vertical trenches

US11935887B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Ryan Keech · Portland, US
• Nicholas G. Minutillo · Beaverton, US
• Anand S. Murthy · Beaverton, US
• Aaron A. Budrevich · Portland, US
• Peter Wells · Portland, US

Key dates

• Filing date: Mar 28, 2019
• Grant date: Mar 19, 2024
• Expiry date: Nov 19, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Integrated circuit structures having source or drain structures with vertical trenches are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. The epitaxial structures of the first and second source or drain structures have a vertical trench centered therein. The first and second source or drain structures include silicon and a Group V dopant impurity.