Inventor · Portland, OR, US

Ryan Keech

18Patents
1h-index
38Co-inventors
46Inventor score

Filing activity: Sep 26, 2018 → Jan 29, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US11610889B2 Arsenic-doped epitaxial, source/drain regions for NMOS Electricity 2 Active
US11804523B2 High aspect ratio source or drain structures with abrupt dopant profile Electricity 1 Active
US11552169B2 Source or drain structures with phosphorous and arsenic co-dopants Electricity 1 Active
US11935887B2 Source or drain structures with vertical trenches Electricity 1 Active
US11164785B2 Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain material Electricity 1 Active
US11328988B2 Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication Electricity 1 Active
US12342574B2 Contact resistance reduction in transistor devices with metallization on both sides Electricity 0 Active
US12094881B2 Arsenic-doped epitaxial source/drain regions for NMOS Electricity 0 Active
US11929320B2 Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication Electricity 0 Active
US12288808B2 High aspect ratio source or drain structures with abrupt dopant profile Electricity 0 Active
US11482621B2 Vertically stacked CMOS with upfront M0 interconnect Electricity 0 Active
US12119387B2 Low resistance approaches for fabricating contacts and the resulting structures Performing Operations; Transporting 0 Active
US12266570B2 Self-aligned interconnect structures and methods of fabrication Electricity 0 Active
US12388011B2 Top gate recessed channel CMOS thin film transistor and methods of fabrication Electricity 0 Active
US11244943B2 Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material Electricity 0 Active
US11996404B2 Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material Electricity 0 Active
US12342611B2 Source or drain structures with vertical trenches Electricity 0 Active
US11973143B2 Source or drain structures for germanium N-channel devices Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.