Aluminum alloy film, method of producing the same, and thin film transistor
US11935936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2019 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Feb 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
[Object] It is an object of the present invention to provide an aluminum alloy film having excellent bending resistance and heat resistance, and a thin film transistor including the aluminum alloy film.[Solving Means] In order to achieve the above-mentioned object, an aluminum alloy film according to an embodiment of the present invention includes: an Al pure metal that includes at least one type of a first additive element selected from the group consisting of Zr, Sc, Mo, Y, Nb, and Ti. A content of the first additive element is 0.01 atomic % or more and 1.0 atomic % or less. Such an aluminum alloy film has excellent bending resistance and excellent heat resistance. Further, also etching can be performed on the aluminum alloy film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.