Semiconductor device structure and method for forming the same
US11935954B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2021 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Mar 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device structure includes a fin structure formed over a substrate. The structure also includes nanostructures formed over the fin structure. The structure also includes a gate structure wrapped around the nanostructures. The structure also includes a first inner spacer formed beside the gate structure. The structure also includes a second inner spacer formed beside the first inner spacer. The structure also includes spacer layers formed over opposite sides of the gate structure above the nanostructures. The structure also includes source/drain epitaxial structures formed over opposite sides of the fin structure. The second inner spacer is partially embedded in the source/drain epitaxial structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.