Quartz glass crucible, manufacturing method of silicon single crystal using the same, and infrared transmissivity measurement method and manufacturing method of quartz glass crucible
US11939695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2019 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | May 9, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P40/57
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A quartz glass crucible 1 having a cylindrical side wall portion 10a, a bottom portion 10b, and a corner portion 10c includes a transparent layer 11 as an innermost layer made of quartz glass, a semi-molten layer 13 as an outermost layer made of raw material silica powder solidified in a semi-molten state, and a bubble layer 12 made of quartz glass interposed therebetween. An infrared transmissivity of the corner portion 10c in a state where the semi-molten layer 13 is removed is 25 to 51%, the infrared transmissivity of the corner portion 10c in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the side wall portion 10a, and the infrared transmissivity of the side wall portion 10a in the state where the semi-molten layer 13 is removed is lower than an infrared transmissivity of the bottom portion 10b.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.