SiC substrate and SiC ingot
US11939699B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2023 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Feb 28, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In the SiC substrate, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [−1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [−1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 2 mΩ·cm or less, and a region other than a high nitrogen concentration region called a facet is included.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.