Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals
US11939700B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Oct 8, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Oct 13, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.