Method of manufacturing semiconductor devices and pattern formation method
US11942322B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 9, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | May 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3086
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.