Multi-region diffusion barrier containing titanium, silicon and nitrogen
US11942365B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2018 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Dec 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76846
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The disclosed technology generally relates to semiconductor structures and their fabrication, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming same. A method of forming an electrically conductive diffusion barrier comprises providing a substrate in a reaction chamber and forming a titanium silicide (TiSi) region on the substrate by alternatingly exposing the substrate to a titanium-containing precursor and a first silicon-containing precursor. The method additionally comprises forming a titanium silicon nitride (TiSiN) region on the TiSi region by alternatingly exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor. The method can optionally include, prior to forming the TiSi region, forming a titanium nitride (TiN) region by alternatingly exposing the substrate to a titanium-containing precursor and a nitrogen-containing precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.