Semiconductor structure and method for making the same
US11942418B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 23, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Aug 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L24/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a combined feature, a protection layer and a polymeric layer. The combined feature includes a passivation layer, an interconnecting structure disposed on the passivation layer, and a dielectric layer disposed on the passivation layer and the interconnecting structure. The protection layer is disposed on the dielectric layer, and is oxide-and-nitride based. The polymeric layer is disposed on the protection layer, and is separated from the interconnecting structure by the protection layer. A method of making a semiconductor structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.