Semiconductor structure having contact structure
US11942425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2022 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Oct 11, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate, a contact structure, a first conductive element, and a first dielectric spacer structure. The semiconductor substrate includes an active region and an isolation structure. The contact structure is on the active region of the semiconductor substrate. The first conductive element is on the isolation structure of the semiconductor substrate. The first dielectric spacer structure is between the contact structure and the first to conductive element. The first dielectric spacer structure has a first concave surface facing the first conductive element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.