Electrostatic discharge protection cell and antenna integrated with through silicon via
US11942441B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 21, 2021 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Apr 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6677
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a through-silicon via (TSV) in a TSV zone in a substrate and the TSV extends through the substrate; an ESD cell proximal to a first end of the TSV and in contact with the TSV zone, the ESD cell including a set of diodes electrically connected in parallel to each other; an antenna pad electrically connected to a second end of the TSV; and an antenna electrically connected to the antenna pad and extending in a first direction, the first direction is parallel to a major axis of the TSV. The semiconductor device includes a conductive pillar extending parallel to the TSV at a same side of the substrate as the antenna pad, wherein a first end of the conductive pillar electrically connects to the antenna pad, and a second end of the conductive pillar electrically connects to the set of diodes of the ESD cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.