Patent · US Active

Semiconductor laser, operating method for a semiconductor laser, and method for determining the optimum fill factor of a semiconductor laser

US11942763B2 · kind B2 · utility

0Cited by

4References

12Claims

0Family size

Assignee

Osram OLED GMBH · DE

Inventors

Harald König · Bernhardswald, DE
Bernhard Stojetz · Wiesent, DE
Alfred Lell · Maxhütte-Haidhof, DE
Muhammad Ali · Dublin, IE

Key dates

Filing date	Dec 14, 2018
Grant date	Mar 26, 2024
Priority date	—
Expiry date	Sep 13, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/176
WIPO fieldOptics
WIPO sectorInstruments

Abstract

In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.