Semiconductor structure and manufacturing method of the same
US11944017B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2023 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | May 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.