Han-Ting Lin
24Patents
3h-index
26Co-inventors
55Inventor score
Filing activity: Aug 27, 2018 → Nov 28, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10651373B2 | Memory device and fabrication method thereof | Electricity | 4 | Active |
| US11101429B2 | Metal etching stop layer in magnetic tunnel junction memory cells | Electricity | 3 | Active |
| US10862023B2 | Semiconductor structure and manufacturing method of the same | Electricity | 3 | Active |
| US11411176B2 | Gradient protection layer in MTJ manufacturing | Electricity | 2 | Active |
| US12219879B2 | Gradient protection layer in MTJ manufacturing | Electricity | 1 | Active |
| US11683991B2 | Semiconductor structure and manufacturing method of the same | Electricity | 1 | Active |
| US11387406B2 | Magnetic of forming magnetic tunnel junction device using protective mask | Electricity | 1 | Active |
| US10868239B2 | Gradient protection layer in MTJ manufacturing | Electricity | 1 | Active |
| US10770345B2 | Integrated circuit and fabrication method thereof | Electricity | 1 | Active |
| US12048250B2 | Method of fabricating magneto-resistive random access memory (MRAM) | Electricity | 0 | Active |
| US11944017B2 | Semiconductor structure and manufacturing method of the same | Electricity | 0 | Active |
| US12262642B2 | Method of fabricating magneto-resistive random access memory (MRAM) | Electricity | 0 | Active |
| US12317751B2 | Integrated circuit | Electricity | 0 | Active |
| US11856865B2 | Gradient protection layer in MTJ manufacturing | Electricity | 0 | Active |
| US11800812B2 | Integrated circuit | Electricity | 0 | Active |
| US11665971B2 | Metal etching stop layer in magnetic tunnel junction memory cells | Electricity | 0 | Active |
| US11964201B2 | Modular pneumatic somatosensory device | Human Necessities | 0 | Active |
| US11271150B2 | Integrated circuit | Electricity | 0 | Active |
| US11968908B2 | Magnetic tunnel junction device | Electricity | 0 | Active |
| US12075707B2 | Semiconductor structure and method for forming the same | Electricity | 0 | Active |
| US11545619B2 | Memory device structure and method for forming the same | Electricity | 0 | Active |
| US11770977B2 | Semiconductor structure and method for forming the same | Electricity | 0 | Active |
| US12017417B2 | Fixture for heat pressing process of manufacturing airbag | Performing Operations; Transporting | 0 | Active |
| US11849644B2 | Method of fabricating magneto-resistive random access memory (MRAM) | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.