Semiconductor transducer device with multilayer diaphragm and method of manufacturing a semiconductor transducer device with multilayer diaphragm
US11946822B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 2019 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Dec 24, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/014
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.