Patent · US Active

Methods and devices related to radio frequency devices

US11948802B2 · kind B2 · utility

0Cited by

0References

14Claims

0Family size

Assignee

Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

Hans Taddiken · Munich, DE
Christian Butschkow · Munich, DE
Andrea Cattaneo · Taufkirchen, DE
Henning Feick · Dresden, DE
Dominik Heiss · Munich, DE
Christoph Kadow · Gauting, DE
Uwe Seidel · Munich, DE
Valentyn Solomko · Munich, DE
Anton Steltenpohl · Munich, DE

Key dates

Filing date	Dec 22, 2021
Grant date	Apr 2, 2024
Priority date	—
Expiry date	Dec 22, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/104
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A device includes a thinned semiconductor substrate having a first side and a second side opposite to the first side; and at least one radio frequency device at the first side, wherein the second side of the thinned semiconductor substrate is processed to reduce leakage currents or to improve a radio frequency linearity of the at least one radio frequency device through Bosch etching.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.