Temperature calibration with deposition and etch process
US11948818B2 · kind B2 · utility
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4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 9, 2021 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | Dec 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for calibrating a temperature within a processing chamber are described. The method includes determining an etch rate of a layer within the processing chamber. The processing chamber is a deposition chamber configured for use during semiconductor manufacturing. The etch rate is utilized to determine a temperature within the processing chamber. The temperature within the processing chamber is then subsequently compared to a calibrated temperature to determine a temperature offset. The etch rate is determined using any one of a pyrometer, a reflectometer, a camera, or a mass sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.