Methods and apparatus for forming dual metal interconnects

US11948885B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Suketu Arun Parikh · San Jose, US
• Rong Tao · San Jose, US
• Roey Shaviv · Palo Alto, US
• Joung Joo Lee · San Jose, US
• Seshadri Ganguli · Sunnyvale, US
• Shirish A. PETHE · Cupertino, US
• David Maxwell Gage · Sunnyvale, US
• Jianshe Tang · San Jose, US
• Michael Stolfi · Clifton Park, US

Key dates

• Filing date: Jun 24, 2021
• Grant date: Apr 2, 2024
• Expiry date: Sep 6, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53266
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.