Charge release layer to remove charge carriers from dielectric grid structures in image sensors

US11948962B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ching-Chung Su · Tainan, TW
• Jiech-Fun Lu · 巷口, TW

Key dates

• Filing date: Jun 16, 2022
• Grant date: Apr 2, 2024
• Expiry date: Jun 16, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

Various embodiments of the present disclosure are directed towards a semiconductor structure including a photodetector disposed within a substrate. A grid structure is disposed over the substrate and the photodetector. A conductive layer is disposed between the grid structure and the substrate. A conductive contact extends into an upper surface of the substrate. The conductive layer is directly electrically coupled to the conductive contact.