Method for preparating SiC ohmic contact with low specific contact resistivity
US11948983B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2021 |
| Grant date | Apr 2, 2024 |
| Priority date | — |
| Expiry date | May 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SiC ohmic contact preparation method is provided and includes: selecting a SiC substrate; preparing a graphene/SiC structure by forming a graphene on a Si-face of the SiC substrate; depositing an Au film on the graphene of the graphene/SiC structure; forming a first transfer electrode pattern on the Au film by a first photolithography; etching the Au film uncovered by the first transfer electrode pattern through a wet etching; etching the graphene uncovered by the Au film through a plasma etching after the wet etching; forming a second transfer electrode pattern on the SiC substrate by a second photolithography; depositing an Au material on the Au film exposed by the second transfer electrode pattern and forming an Au electrode and then annealing. The graphene reduces potential barrier associated with the SiC interface, specific contact resistance of ohmic contact reaches the order of 10−7˜10−8 Ω·cm2, and the method has high repeatability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.