Hui Guo
5Patents
0h-index
13Co-inventors
38Inventor score
Filing activity: May 31, 2012 → Oct 11, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11948983B2 | Method for preparating SiC ohmic contact with low specific contact resistivity | Electricity | 0 | Active |
| US9691612B2 | Process for preparing graphene on a SiC substrate based on metal film-assisted annealing | Chemistry; Metallurgy | 0 | Active |
| US9951418B2 | Method for preparing structured graphene on SiC substrate based on Cl2 reaction | Chemistry; Metallurgy | 0 | Active |
| US9728292B2 | I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof | Electricity | 0 | Active |
| US9048092B2 | Process for preparing graphene based on metal film-assisted annealing and the reaction with Cl2 | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.